kw.\*:("II-VI COMPOUND")
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THE STATISTICAL MODEL OF INDEPENDENT LAYER DISTRIBUTION FOR THE STRUCTURE OF POLYTYPIC CRYSTALS.KOZIELSKI M; TOMASZEWICZ A.1977; BULL. ACAD. POLON. SCI., SCI. MATH. ESTR. PHYS.; POLOGNE; DA. 1977; VOL. 25; NO 3; PP. 313-320; ABS. RUSSE; BIBL. 8 REF.Article
EFFICIENCY OF SECOND-HARMONIC GENERATION IN II-VI COMPOUND SEMICONDUCTORS AT 77KMUKHOPADHYAY D; SHINJITA DEY.1980; PROC. IEEE; ISSN 0018-9219; USA; DA. 1980; VOL. 68; NO 6; PP. 746-747; BIBL. 7 REF.Article
PROPRIETES ELASTIQUES ET DEFAUTS DES COUCHES AIIBVI SEMICONDUCTRICESSERGEEVA LA.1980; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1980; VOL. 16; NO 8; PP. 1346-1351; BIBL. 24 REF.Article
NIVEAUX PROFONDS ASSOCIES AUX DISLOCATIONS "60O" DANS LES SEMI-CONDUCTEURS DE STRUCTURE SPHALERITEFARVACQUE JL; FERRE D.1980; REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1980; VOL. 15; NO 1; PP. 33-36; ABS. ENG; BIBL. 7 REF.Article
INTERACTION PHYSICOCHIMIQUE DANS LES SYSTEMES AIIBVI-AIIBVITOMASHIK VN; OLEJNIK GS; MIZETSKAYA IB et al.1980; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1980; VOL. 16; NO 6; PP. 994-996; BIBL. 21 REF.Article
2009 U.S. Workshop on the Physics and Chemistry of II-VI MaterialsSIVANANTHAN, S; DHAR, N. K; ANTER, Y et al.Journal of electronic materials. 2010, Vol 39, Num 7, issn 0361-5235, 295 p.Conference Proceedings
Band lineups at II-VI heterojunctions: failure of the common-anion ruleTERSOFF, J.Physical review letters. 1986, Vol 56, Num 25, pp 2755-2758, issn 0031-9007Article
Optically bistable thin film devices using wide-gap II-VI compoundsEICHLER, H. J; GLAW, V; KUMMROW, A et al.Journal of crystal growth. 1990, Vol 101, Num 1-4, pp 695-698, issn 0022-0248Conference Paper
Blue-light emission from ZnSTe-based EL devicesSOU, I. K; MAO, J; MA, Z et al.Journal of crystal growth. 1997, Vol 175-76, pp 632-636, issn 0022-0248, 1Conference Paper
II-VI light-emitting devices based on beryllium chalcogenidesFISCHER, F; LANDWEHR, G; LITZ, T et al.Journal of crystal growth. 1997, Vol 175-76, pp 532-540, issn 0022-0248, 1Conference Paper
Static and dynamical properties of the bound magnetic polaron in CdTe/Cd1-xMnxTe quantum wellsBOUDINET, P; BASTARD, G.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 1117-1120, issn 0038-1101Conference Paper
Effect of disorder on exciton dynamics in cation-substituted ZnxCd1-xS mixed crystalsSHEVEL, S. G; VOZNY, V. L; VYTRYKHIVSKY, M. I et al.SPIE proceedings series. 1998, pp 213-220, isbn 0-8194-2808-6Conference Paper
Mouvement de dislocations chargées dans les semiconducteurs A2B6VELIEV, Z. A; SHIKIN, V. B.Fizika tverdogo tela. 1985, Vol 27, Num 9, pp 2683-2686, issn 0367-3294Article
Growth and characterisation of Mg-based low dimensional systems for blue-green optoelectronicsPRETE, P.Materials science forum. 2002, pp 43-50, issn 0255-5476, isbn 0-87849-890-7Conference Paper
Zeeman studies of CdTe-Cd1-xMnxTe multiquantum wellsJACKSON, S; BARDORF, S. R; STIRNER, T et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 1129-1132, issn 0038-1101Conference Paper
Monte Carlo calculation of velocity-field characteristics in II-VI compound semiconductorsDUTTA, A; MALLICK, P. S; MUKHOPADHYAY, D et al.International journal of electronics. 1998, Vol 84, Num 3, pp 203-214, issn 0020-7217Article
The development of II-VI semiconductors for blue diode lasersPRIOR, K.Contemporary physics. 1996, Vol 37, Num 5, pp 345-358, issn 0010-7514Article
Band offsets and electronic structures of (ZnCdHg)(SSeTe) strained superlatticesNAKAYAMA, T.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 1077-1080, issn 0038-1101Conference Paper
Electrolyte-semiconductor junctions in the case of p-type II-VI alloys with common telluride anionLEMASSON, P.Solid state communications. 1983, Vol 48, Num 5, pp 411-415, issn 0038-1098Article
LIGHT MODULATORS AND DEFLECTORS BASED ON POLARITON EFFECTSSKETTRUP T.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6292-6295; BIBL. 11 REF.Article
A SEMIQUANTITATIVE DETERMINATION OF WURTZITE, ZINCBLENDE, AND ROCKSALT PHASES IN II-VI COMPOUNDSOHTANI G; SENNA M.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 60; NO 1; PP. K35-K37; BIBL. 5 REF.Article
ETUDE DE SURFACE DES COMPOSES II-VIEBINA A; TAKAAASHI T.1977; OYO BUTURI; JAP.; DA. 1977; VOL. 46; NO 7; PP. 744-749; BIBL. 22 REF.Article
MORPHOLOGY OF HOLLOW CRYSTALS OF II-VI COMPOUNDS.SIMOV S.1976; J. MATER. SCI.; G.B.; DA. 1976; VOL. 11; NO 12; PP. 2319-2332; BIBL. 1 P.Article
QUANTUM-DIELECTRIC BEHAVIOR OF ANB8-N BINARY SOLIDSSARKAR KK; GOYAL SC.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 21; NO 2; PP. 879-883; BIBL. 15 REF.Article
LUMINESCENCE AND ELECTRICAL PROPERTIES OF MGXZNL-XTE ALLOYSSOMOGYI K; CHEVALLIER J; ROMMELUERE JF et al.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 8; PP. 1198-1201; BIBL. 11 REF.Article